Interconnects having sealing structures to enable selective metal capping layers
US7402519B2 · kind B2 · utility
4Cited by
1References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2005 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Jun 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.