Light emitting devices with self aligned ohmic contacts
US7402837B2 · kind B2 · utility
14Cited by
15References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Nov 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating light emitting diodes and light emitting devices are provided that include a substrate, an n-type epitaxial region on the substrate and a p-type epitaxial region on the n-type epitaxial region. At least a portion of the p-type epitaxial region comprises a mesa with respect to the substrate. An ohmic contact is provided on an exposed portion of the p-type epitaxial layer. The ohmic contact is self aligned to a sidewall of the mesa and to the p-type epitaxial layer such that a sidewall of the ohmic contact is substantially aligned with a sidewall of the mesa and to the p-type epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.