Method for fabricating a capacitor

US7402860B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Christian Kapteyn · Dresden, DE
• Stephan Kudelka · Radeberg, DE
• Thomas Hecht · Dresden, DE

Key dates

• Filing date: Jul 11, 2005
• Grant date: Jul 22, 2008
• Expiry date: Jan 2, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/68

Abstract

The present invention relates to a method of fabricating a capacitor in a semiconductor substrate. The capacitor is fabricated such that the capacitor comprises: a trench inside a substrate, the trench having a lower region and an upper region, wherein the trench's diameters in the lower region is larger than in the upper region; a first electrode; a dielectric layer on top of the first electrode; a conductive layer on top of the electric layer, the conductive layer forming a second electrode of the capacitor; and a plug forming a closed cavity inside the lower region.