Tunnel oxynitride in flash memories
US7405125B2 · kind B2 · utility
5Cited by
7References
41Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 1, 2004 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Jun 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a region of concentrated nitrogen. Oxidizing the structure and redistributing the nitrogen is performed via radical oxidation. Nitrogen is added to the oxide structure. The region of concentrated nitrogen helps to regulate the depth of the added nitrogen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.