High-k dielectric film, method of forming the same and related semiconductor device
US7405482B2 · kind B2 · utility
2Cited by
7References
11Claims
0Family size
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Key dates
| Filing date | Jan 27, 2006 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Jul 15, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/914
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.