Resistance random access memory devices and method of fabrication
US7407858B2 · kind B2 · utility
61Cited by
3References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 11, 2006 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
A method of fabricating a RRAM includes preparing a substrate and forming a bottom electrode ori the substrate. A PCMO layer is deposited on the bottom electrode using MOCVD or liquid MOCVD, followed by a post-annealing process. The deposited PCMO thin film has a crystallized PCMO structure or a nano-size and amorphous PCMO structure. A top electrode is formed on the PCMO layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.