Capacitor of analog semiconductor device having multi-layer dielectric film and method of manufacturing the same
US7407897B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2005 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Jul 1, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/957
Abstract
In a capacitor of an analog semiconductor device having a multi-layer dielectric film and a method of manufacturing the same, the multi-layer dielectric film can be readily manufactured, has weak reactivity with corresponding electrodes and offers excellent leakage current characteristics. In order to obtain these advantages, a lower dielectric film having a negative quadratic VCC, an intermediate dielectric film having a positive quadratic VCC, and an upper dielectric film having a negative quadratic VCC are sequentially formed between a lower electrode and an upper electrode. The lower dielectric film and the upper dielectric film may be composed of SiO2. The intermediate dielectric film may be composed of HFO2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.