Charge trapping device and method of producing the charge trapping device

US7408222B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Rainer Hagenbeck · Putzbrunn, DE
• Christoph Ludwig · Radeberg, DE
• Mark Isler · Lebanon, US
• Elard Stein Von Kamienski · Dresden, DE

Key dates

• Filing date: Mar 27, 2006
• Grant date: Aug 5, 2008
• Expiry date: May 18, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/69

Abstract

A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.