Patent · US Expired

Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method

US7408803B2 · kind B2 · utility

1Cited by

6References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Freitag · Munich, DE
Stefan Miethaner · Regensburg, DE
Wolfgang Raberg · Sauerlach, DE

Key dates

Filing date	Aug 18, 2003
Grant date	Aug 5, 2008
Priority date	—
Expiry date	Jan 9, 2025

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/1675
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.