Patent · US Expired

Device based on partially oxidized porous silicon and method for its production

US7410794B2 · kind B2 · utility

0Cited by

7References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Dertinger · Tokyo, JP
Michaela Fritz · Munich, DE
Karin Fuchs · Pfronten, DE
Thomas Haneder · Hersbruck, DE
Volker Lehmann · Hersbruck, DE
Alfred Martin · Munich, DE
Reinhard Marz · Birkenfeld, DE

Key dates

Filing date	Oct 15, 2004
Grant date	Aug 12, 2008
Priority date	—
Expiry date	Oct 15, 2024

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC40B60/14
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Device having a flat macroporous support material made of silicon and having surfaces, a plurality of pores each having a diameter in a range of from 500 nm to 100 μm distributed over at least one surface region of the support material and extending from one surface through to the opposite surface of the support material, at least one region having one or more pores with SiO2 pore walls, and a frame of walls with a silicon core surrounding the at least one region and arranged essentially parallel to longitudinal axes of the pores and open towards the surfaces, wherein the silicon core merges into silicon dioxide over a cross section towards an outer side of the walls forming the frame.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.