Device fabrication by anisotropic wet etch
US7410844B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2006 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Apr 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0245
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabrication and a field effect device structure are presented that reduce source/drain capacitance and allow for device body contact. A Si based material pedestal is produced, the top surface and the sidewalls of which are oriented in a way to be substantially parallel with selected crystallographic planes of the pedestal and of a supporting member. The pedestal is wet etched with an anisotropic solution containing ammonium hydroxide. The sidewalls of the pedestal become faceted forming a segment in the pedestal with a reduced cross section. The dopant concentration in the reduced cross section segment is chosen to be sufficiently high for it to provide for electrical continuity through the pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.