Methods of forming dynamic random access memory trench capacitors
US7410861B2 · kind B2 · utility
1Cited by
52References
39Claims
0Family size
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Key dates
| Filing date | Oct 15, 2004 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Jun 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.