Miniaturized virtual grounding nonvolatile semiconductor memory device and manufacturing method thereof
US7411242B2 · kind B2 · utility
4Cited by
4References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2005 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Jul 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6891
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The object of the present invention is to provide a new nonvolatile semiconductor memory device and its manufacturing method for the purpose of miniaturizing a virtual grounding type memory cell based on a three-layer polysilicon gate, enhancing the performance, and boosting the yield. In a memory cell according to the present invention, a floating gate's two end faces perpendicular to a word line and channel are partly placed over the top of a third gate via a dielectric film. The present invention can reduce the memory cell area of a nonvolatile semiconductor memory device, increase the operating speed, and enhances the yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.