Patent · US Active

Method for operating an electrical writable and erasable memory cell and a memory device for electrical memories

US7411837B2 · kind B2 · utility

2Cited by

12References

43Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Joachim Deppe · Dresden, DE
Mark Isler · Lebanon, US
Christoph Ludwig · Radeberg, DE
Jens-Uwe Sachse · Dresden, DE
Jan-Malte Schley · Dresden, DE
Ricardo P. Mikalo · Stadtroda, DE

Key dates

Filing date	Nov 16, 2006
Grant date	Aug 12, 2008
Priority date	—
Expiry date	Nov 16, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C16/26
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method is provided for operating an electrical writable and erasable memory cell, which has a channel region that can be operated in a first and a second direction, wherein information is stored as the difference of an effective parameter.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.