Gas reaction system and semiconductor processing apparatus
US7413611B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2004 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jul 23, 2024 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction gas generated in the vaporizer (230) is directly introduced into the reaction chamber (221A). The vaporization chamber (232) of the vaporizer (230) is a space between an upper plate (230A) and a cap (230B) attached to the upper surface of the upper plate (230A). A narrow passage (233) is formed between the cap (230B) and the upper plate (230A) which passage (233) communicates with the vaporization chamber (232).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.