Single exposure of mask levels having a lines and spaces array using alternating phase-shift mask
US7413833B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 14, 2004 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Apr 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An active area pattern is formed atop a deep trench pattern with a single exposure using an alternative phase-shift mask. To prevent adjacent spaces of opposite phase from intersecting one another at the ends of substantially opaque features of the active area pattern, one or more connectors are used to connect the ends of the substantially opaque patterns. Trench regions of the deep trench pattern are arranged such that the conduction path of the connectors are interrupted and prevent the lines from shorting to one another. Alternatively, a bit line pattern or a word line pattern having a lines and spaces array and a support region are printed with a single exposure using an alternating phase-shift mask. At one end of the array region, lines having a respective phase shift extend into the support region, and lines of the opposite phase shift are terminated. At the opposite end of the array, the lines that have the opposite phase shift extend into the support region, and the lines of having the respective phase shift are terminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.