Method of removing photoresist and photoresist rework method
US7413848B2 · kind B2 · utility
3Cited by
11References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 27, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Aug 3, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/422
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of removing photoresist is provided. In the whole process of removing the photoresist, plasma is not used. Instead, a first solution is used in a first removal step to remove a photoresist layer. Then, a second solution is used in a second removal step to completely remove the photoresist layer. The first solution and the second solution have different polarities, and the polarity of the first solution is large than that of the second solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.