Method and apparatus for detecting planarization of metal films prior to clearing
US7413988B1 · kind B1 · utility
2Cited by
5References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 27, 2003 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jul 13, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for planarizing a semiconductor substrate is provided. The method initiates with tracking a signal corresponding to a thickness of a conductive film disposed on the semiconductor substrate. Then, a second derivative is calculated from data representing the tracked signal. Next, the onset of planarization is identified based upon a change in the second derivative. A CMP system configured to identify a transition between stages of the CMP operation is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.