Structure and method of sub-gate and architectures employing bandgap engineered SONOS devices
US7414889B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A bandgap engineered SONOS device structure for design with various AND architectures to perform a source side injection programming method. The BE-SONOS device structure comprises a spacer oxide disposed between a control gate overlaying an oxide-nitride-oxide-nitride-oxide stack and a sub-gate overlaying a gate oxide. In a first embodiment, a BE-SONOS sub-gate-AND array architecture is constructed multiple columns of SONONOS devices with sub-gate lines and diffusion bitlines. In a second embodiment, a BE-SONOS sub-gate-inversion-bitline-AND architecture is constructed multiple columns of SONONOS devices with sub-gate inversion bitlines and with no diffusion bitlines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.