Re-driving CAwD and rD signal lines
US7414917B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Nov 12, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K1/142
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Semiconductor memory modules and semiconductor memory systems using the same are described herein. The modules divide a conventional DIMM into a series of separate, smaller memory modules. Each memory module includes at least one semiconductor memory chip arranged on a substrate; CAwD signal input lines arranged on the substrate in a first predetermined line number and connecting one of the semiconductor memory chips to CAwD input signal pins on the substrate; and rD signal output lines arranged on the substrate in a second predetermined line number and connecting the one or a last semiconductor memory to a second number of rD output signal pins of the substrate. In a semiconductor memory system including the semiconductor memory modules, each memory module is separately connected to a memory controller by the CAwD signal input lines and the rD signal output lines in a respective point-to-point fashion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.