High quality single crystal and method of growing the same
US7416603B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 19, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | May 1, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Disclosed is a method of growing a single crystal from a melt contained in a crucible. The method includes the step of making the temperature of a melt increase gradually to a maximum point and then decrease gradually along the axis parallel to the lengthwise direction of the single crystal from the interface of the single crystal and the melt to the bottom of the crucible. The increasing temperature of the melt is kept to preferably have a greater temperature gradient than the decreasing temperature thereof. Preferably, the axis is set to pass through the center of the single crystal. Preferably, the convection of the inner region of the melt is made smaller than that of the outer region thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.