Patent · US Active

Semiconductor device protective structure and method for fabricating the same

US7416920B2 · kind B2 · utility

5Cited by
1References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 3, 2006
Grant dateAug 26, 2008
Priority date
Expiry dateDec 2, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3511
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present invention provides a semiconductor device protective structure. The structure comprises a die with contact metal balls formed thereon electrically coupling with a print circuit board. A back surface of the die is directly adhered on a substrate and a first buffer layer is formed on the substrate. The substrate is configured over a second buffer layer such that the second buffer layer substantially encompasses the whole substrate to decrease damage to the substrate when the side of the substrate is collided with an external object.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.