Method for producing an SOI field effect transistor

US7416927B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Gottsche · Munich, DE
• Christian Pacha · Birkenfeld, DE
• Thomas Schulz · Austin, US
• Werner Steinhogl · Birkenfeld, DE

Key dates

• Filing date: Sep 23, 2004
• Grant date: Aug 26, 2008
• Expiry date: Apr 25, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method for producing a first SOI field effect transistor with predetermined transistor properties by forming a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate, forming a spacer layer having a predetermined thickness, on at least a portion of the sidewalls of the laterally delimited layer sequence, and forming two source/drain regions having a predetermined dopant concentration profile, by introducing dopant into two surface regions of the substrate which are adjoined by the spacer layer, the layer sequence and the spacer layer forming a shading structure that prevents dopant from being introduced into a surface region of the substrate between the two source/drain regions, wherein the predetermined transistor properties of the first SOI field effect transistor are set by setting the thickness of the spacer layer and by setting the dopant concentration profile.