Thomas Schulz
86Patents
14h-index
111Co-inventors
87Inventor score
Filing activity: Aug 21, 1998 → Nov 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7755144B2 | Multiple-gate MOS transistors | Electricity | 111 | Active |
| US6459123B1 | Double gated transistor | Electricity | 96 | Expired |
| US7462538B2 | Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials | Electricity | 28 | Expired |
| US7488650B2 | Method of forming trench-gate electrode for FinFET device | Electricity | 27 | Expired |
| US6964725B2 | Soft tissue products containing selectively treated fibers | Textiles; Paper | 24 | Expired |
| US7291877B2 | Integrated circuit arrangement with capacitor | Electricity | 23 | Expired |
| US7638370B2 | Method for producing multi-gate field-effect transistor with fin structure having drain-extended MOS field-effect transistor | Electricity | 21 | Active |
| US6614069B2 | Nonvolatile semiconductor memory cell and method for fabricating the memory cell | Electricity | 20 | Expired |
| US6141202A | Method and apparatus for triggering a fuse | Electricity | 19 | Expired |
| US6362502B1 | DRAM cell circuit | Electricity | 19 | Expired |
| US7879727B2 | Method of fabricating a semiconductor device including a pattern of line segments | Electricity | 16 | Active |
| US7820505B2 | Integrated circuit arrangement with capacitor and fabrication method | Electricity | 16 | Active |
| US7646046B2 | Field effect transistor with a fin structure | Electricity | 16 | Active |
| US6433442B1 | Method and apparatus for operating a safety device for motor vehicles | Performing Operations; Transporting | 14 | Expired |
| US7094650B2 | Gate electrode for FinFET device | Electricity | 13 | Expired |
| US7075148B2 | Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cells | Electricity | 12 | Expired |
| US7265376B2 | Non-volatile memory cell, memory cell arrangement and method for production of a non-volatile memory cell | Electricity | 10 | Expired |
| US8124483B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 10 | Active |
| US8629500B2 | Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistor | Electricity | 10 | Active |
| US6909141B2 | Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor component | Electricity | 9 | Expired |
| US7416927B2 | Method for producing an SOI field effect transistor | Electricity | 9 | Expired |
| US7851844B2 | Memory device having cross-shaped semiconductor fin structure | Electricity | 9 | Active |
| US7709827B2 | Vertically integrated field-effect transistor having a nanostructure therein | Electricity | 9 | Expired |
| US7902005B2 | Method for fabricating a fin-shaped semiconductor structure and a fin-shaped semiconductor structure | Electricity | 8 | Active |
| US8188551B2 | Semiconductor devices and methods of manufacture thereof | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.