Patent · US Active

Method of patterning a low-k dielectric using a hard mask

US7416992B2 · kind B2 · utility

4Cited by

12References

20Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Matthias Lehr · Dresden, DE
Peter Huebler · Coswig, DE
Christian Zistl · Dresden, DE

Key dates

Filing date	Nov 28, 2005
Grant date	Aug 26, 2008
Priority date	—
Expiry date	Aug 30, 2026

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/952
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

By using a non-metallic hard mask for patterning low-k dielectric materials of advanced semiconductor devices, an enhanced degree of etch fidelity is obtained. The present invention may readily be applied to via first-trench last, trench first-via last schemes.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.