Phase change memory having multilayer thermal insulation
US7417245B2 · kind B2 · utility
40Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2005 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Dec 10, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory cell includes a first electrode, a second electrode, phase-change material contacting the first electrode and the second electrode, multilayer thermal insulation contacting the phase-change material, and dielectric material contacting the multilayer thermal insulation. The multilayer thermal insulation may include at least an electrically isolating layer and an electrically conducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.