III-nitride device with improved layout geometry
US7417257B2 · kind B2 · utility
20Cited by
19References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2006 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Dec 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/257
Abstract
A III-nitride power device for controlling high currents as an interdigitated electrode pattern for increasing device rating while decreasing device dimensions. Fingers of the interdigitated electrode pattern have tips with smaller dimensions than the remainder of the fingers. The tapered finger design balances current flow in the electrode fingers to reduce device resistance while permitting a more compact construction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.