Distributed high voltage JFET
US7417270B2 · kind B2 · utility
5Cited by
9References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 23, 2004 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jun 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/343
Abstract
A Junction Field Effect Transistor (JFET) can be fabricated with a well region that include a channel region having an average dopant concentration substantially less the average doping concentration of the remaining portions of the well region. The lower average doping concentration of channel region compared to the remaining portions of the well region reduces the pinch-off voltage of the JFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.