Semiconductor devices including implanted regions and protective layers and methods of forming the same
US7419892B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Mar 13, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device include forming a protective layer on a semiconductor layer, implanting ions having a first conductivity type through the protective layer into the semiconductor layer to form an implanted region of the semiconductor layer, and annealing the semiconductor layer and the protective layer to activate the implanted ions. An opening is formed in the protective layer to expose the implanted region of the semiconductor layer, and an electrode is formed in the opening. A semiconductor structure includes a Group III-nitride semiconductor layer, a protective layer on the semiconductor layer, a distribution of implanted dopants within the semiconductor layer, and an ohmic contact extending through the protective layer to the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.