Objective lens, electron beam system and method of inspecting defect
US7420164B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jul 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/28
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam system or a method for manufacturing a device using the electron beam system in which an electron beam can be irradiated at a high current density and a ratio of transmittance of a secondary electron beam of an image projecting optical system can be improved and which can be compact in size. The surface of the sample S is divided into plural stripe regions which in turn are divided into rectangle-shaped main fields. The main field is further divided into plural square-shaped subfields. The irradiation with the electron beams and the formation of a two-dimensional image are repeated in a unit of the subfields. A magnetic gap formed by the inner and outer magnetic poles of the objective lens is formed on the side of the sample, and an outer side surface and an inner side surface of each of the inner magnetic pole and the outer magnetic pole, respectively, forming the magnetic gap have each part of a conical shape with a convex having an angle of 45° or greater with respect to the optical axis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.