Bipolar transistor comprising carbon-doped semiconductor

US7420228B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Bock · Birkenfeld, DE
• Thomas Meister · Taufkirchen, DE
• Reinhard Stengl · Stadtbergen, DE
• Herbert Schafer · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Oct 7, 2005
• Grant date: Sep 2, 2008
• Expiry date: Oct 7, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/834

Abstract

A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a second side of the collector region, and an emitter region of the first conduction type which is provided above the base region on the side remote from the collection region. A carbon-doped semiconductor region is provided on the first side alongside the collector region. The bipolar transistor is characterized in that the carbon-doped semiconductor region has a carbon concentration of 1019-1021 cm−3 and the base region has a smaller cross section than the collector region and the collector region has, in the overlap region with the base region, a region having an increased doping compared with the remaining region. The carbon-doped semiconductor region prevents an outdiffusion from the zone of the collector region into the remaining region of the collector region.