Boron-doped SIC copper diffusion barrier films
US7420275B1 · kind B1 · utility
37Cited by
33References
20Claims
0Family size
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Key dates
| Filing date | Mar 8, 2006 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Feb 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Copper diffusion barrier films having a boron-doped silicon carbide layer with at least 25% boron by atomic weight of the layer composition have advantages for semiconductor device integration schemes. The films have an integration worthy etch selectivity to carbon doped oxide of at least 10 to 1, can adhere to copper with an adhesion energy of at least 20 J/m2, and can maintain an effective dielectric constant of less than 4.5 in the presence of atmospheric moisture. The films are suitable for use in a wide range of VLSI and ULSI structures and devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.