Method for switching magnetic moment in magnetoresistive random access memory with low current
US7420837B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2006 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | May 27, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1693
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.