Yuan-Jen Lee
47Patents
7h-index
30Co-inventors
65Inventor score
Filing activity: Jun 23, 2005 → May 19, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7515458B2 | Structure and access method for magnetic memory cell and circuit of magnetic memory | Physics | 39 | Active |
| US9425387B1 | Magnetic element with perpendicular magnetic anisotropy for high coercivity after high temperature annealing | Electricity | 35 | Active |
| US10014465B1 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Electricity | 14 | Active |
| US9805816B2 | Implementation of a one time programmable memory using a MRAM stack design | Electricity | 13 | Active |
| US7577019B2 | Magnetic memory cell with multiple-bit in stacked structure and magnetic memory device | Emerging Cross-Sectional Technologies | 12 | Active |
| US9780299B2 | Multilayer structure for reducing film roughness in magnetic devices | Electricity | 10 | Active |
| US10102896B2 | Adaptive reference scheme for magnetic memory applications | Physics | 8 | Active |
| US10522752B1 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Electricity | 6 | Active |
| US7539049B2 | Magnetic random access memory and operation method | Emerging Cross-Sectional Technologies | 4 | Active |
| US9747965B2 | Adaptive reference scheme for magnetic memory applications | Physics | 4 | Active |
| US10522744B2 | High thermal stability by doping of oxide capping layer for spin torque transfer (STT) magnetic random access memory (MRAM) applications | Electricity | 4 | Active |
| US10957851B2 | Magnetic layer for magnetic random access memory (MRAM) by moment enhancement | Electricity | 4 | Active |
| US9343132B2 | MRAM write pulses to dissipate intermediate state domains | Physics | 4 | Active |
| US7463510B2 | High-bandwidth magnetoresistive random access memory devices | Physics | 4 | Active |
| US10522747B2 | Fully compensated synthetic ferromagnet for spintronics applications | Electricity | 3 | Active |
| US9842988B2 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Electricity | 3 | Active |
| US10763428B2 | Magnetic tunnel junction with low defect rate after high temperature anneal for magnetic device applications | Electricity | 3 | Active |
| US10658577B2 | Maintaining coercive field after high temperature anneal for magnetic device applications with perpendicular magnetic anisotropy | Electricity | 3 | Active |
| US10115892B2 | Multilayer structure for reducing film roughness in magnetic devices | Electricity | 2 | Active |
| US7420837B2 | Method for switching magnetic moment in magnetoresistive random access memory with low current | Physics | 2 | Expired |
| US10699765B2 | Methods and circuits for programming STT-MRAM cells for reducing back-hopping | Physics | 1 | Active |
| US10784310B2 | Cooling for PMA (perpendicular magnetic anisotropy) enhancement of STT-MRAM (spin torque transfer-magnetic random access memory) devices | Electricity | 1 | Active |
| US7577017B2 | High-bandwidth magnetoresistive random access memory devices and methods of operation thereof | Physics | 1 | Active |
| US10509074B2 | Electrical testing apparatus for spintronics devices | Electricity | 1 | Active |
| US10230044B2 | Fully compensated synthetic ferromagnet for spintronics applications | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.