System and method for performing SIMOX implants using an ion shower
US7421973B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2004 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | May 29, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31708
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion shower comprises a plasma source operable to generate source gas ions within a chamber, and an extraction assembly associated with a top portion of the chamber. The extraction assembly is operable to extract ions from the top portion of the chamber. The ion shower further comprises a workpiece support structure associated with the top portion of the chamber that is operable to secure the workpiece having an implantation surface orientated facing downward toward the extraction assembly for implantation thereof. The ion shower of the present invention advantageously facilitates SIMOX processing with a high oxygen fraction, and uniform beam current for next generation processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.