Three inch silicon carbide wafer with low warp, bow, and TTV
US7422634B2 · kind B2 · utility
45Cited by
57References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2005 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Jul 27, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/21
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches, a warp of less than about 5 μm, a bow less than about 5 μm, and a total thickness variation of less than about 2.0 μm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.