Ion beam monitoring in an ion implanter using an imaging device
US7423277B2 · kind B2 · utility
3Cited by
4References
27Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 14, 2006 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Jan 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30477
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An image monitor system monitors characteristics of an ion beam employed in ion implantation. The monitored characteristics can include particle count, particle information, beam current intensity, beam shape, and the like. The system includes one or more image sensors that capture frames or images along a beam path of an ion beam. An image analyzer analyzes the captured frames to obtain measured characteristics. A controller determines adjustments or corrections according to the measured characteristics and desired beam characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.