System and method for measuring residual stress
US7423287B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2007 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Mar 23, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49004
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The invention comprises devices and methods for determining residual stress in MEMS devices such as interferometric modulators. In one example, a device measuring residual stress of a deposited conduct material includes a material used to form a MEMS device, and a plurality of disconnectable electrical paths, wherein said plurality of paths are configured to disconnect as a function of residual stress of the material. In another example, a method of measuring residual stress of a conductive deposited material includes monitoring a plurality of signals, each of said plurality of signals being associated with one of a plurality of test structures, said plurality of test structures each being configured to change the associated signal upon being subject to a predetermined amount of residual stress, sensing a change in said plurality of signals, and determining a residual stress level in said material based on the sensed change in the plurality of signals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.