Semiconductor device with raised segment
US7423323B2 · kind B2 · utility
8Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2005 |
| Grant date | Sep 9, 2008 |
| Priority date | — |
| Expiry date | Dec 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6741
Abstract
A device having a raised segment, and a manufacturing method for same. An SOI wafer is provided having a substrate, an insulating layer disposed over the substrate, and a layer of semiconductor material disposed over the insulating layer. The semiconductor material is patterned to form a mesa structure. The wafer is annealed to form a raised segment on the mesa structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.