Method for hard mask CD trim
US7425277B1 · kind B1 · utility
2Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Dec 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.