Apparatus, precursors and deposition methods for silicon-containing materials
US7425350B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 2005 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Apr 2, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/249969
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in the presence of a porogen to thereby form a porogen-containing Si-containing film. The porogen may be removed from the porogen-containing Si-containing film to thereby form a porous Si-containing film. Preferred porous Si-containing films have low dielectric constants and thus are suitable for various low-k applications such as in microelectronics and microelectromechanical systems.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.