Method for forming patterns aligned on either side of a thin film
US7425509B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 16, 2003 |
| Grant date | Sep 16, 2008 |
| Priority date | — |
| Expiry date | Aug 29, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0214
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming patterns which are aligned on either side of a thin film deposited on a substrate. The method includes depositing a first pattern layer on the thin film which may occur before or after the local etching of the thin film to form a first marking. The method includes etching the first pattern layer in order to form a first pattern and depositing a first bonding layer for covering the first marking and the first pattern. The method may include suppressing the substrate as well as etching the first bonding layer to form a second marking at the location of the first marking. The method includes depositing a second pattern layer, and etching the second pattern layer to form the second pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.