Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
US7427325B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 2006 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Dec 21, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1088
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method for producing a high quality silicon single crystal by the Czochralski method, a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part and a circumferential part, and the temperature gradient of the central part and the temperature gradient of the circumferential part are separately controlled. When a silicon melt located at a lower portion of a solid-liquid interface of a single crystal growth is divided into a central part melt and a circumferential part melt, the method controls the temperature gradient of the central part melt by directly controlling the temperature distribution of a melt and indirectly controls the temperature gradient of the circumferential part melt by controlling the temperature gradient of the single crystal, thereby effectively controlling the overall temperature distribution of the melt, thus producing a high quality single crystal ingot free of defects with a high growth velocity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.