System and method for critical dimension reduction and pitch reduction
US7427458B2 · kind B2 · utility
0Cited by
7References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 30, 2005 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Jul 20, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a feature includes forming a mask of a first material on an underlying layer, the mask having an incorrect profile. The profile of the mask is corrected and a feature is formed in the underlying layer. A system for forming a feature is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.