Passivated magneto-resistive bit structure and passivation method therefor
US7427514B2 · kind B2 · utility
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68References
11Claims
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Key dates
| Filing date | Aug 22, 2003 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | May 15, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.