Generating simulated diffraction signals for two-dimensional structures
US7427521B2 · kind B2 · utility
2Cited by
4References
43Claims
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Key dates
| Filing date | Oct 17, 2002 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Nov 6, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/4788
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
One or more simulated diffraction signals for use in determining the profile of a structure formed on a semiconductor wafer can be generated, where the profile varies in more than one dimension. Intermediate calculations are generated for variations in a hypothetical profile of the structure in a first dimension and a second dimension, where each intermediate calculation corresponds to a portion of the hypothetical profile of the structure. The generated intermediate calculations are then stored and used in generating one or more simulated diffraction signals for one or more hypothetical profiles of the structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.