Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy

US7427555B2 · kind B2 · utility

Assignees

• The Regents of the University of California · US
• Japan Science and Technology Agency · JP

Inventors

• Benjamin A. Haskell · Lompoc, US
• Paul T. Fini · Lompoc, US
• Shigemasa Matsuda · Tokyo, JP
• Michael D. Craven · Goleta, US
• Steven P. DenBaars · Goleta, US
• James S. Speck · Fremont, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Jul 15, 2003
• Grant date: Sep 23, 2008
• Expiry date: Jan 12, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Highly planar non-polar GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques.