Methods of forming bumps using barrier layers as etch masks
US7427557B2 · kind B2 · utility
17Cited by
41References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2005 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Oct 2, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0723
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Forming an electronic structure may include forming a seed layer on a substrate, and forming a mask on the seed layer. The mask may include an aperture therein exposing a portion of the seed layer, and a barrier layer may be formed on the exposed portion of the seed layer. A bump may be formed on the barrier layer, and the mask may be removed. In addition, portions of the seed layer may be selectively removed using the barrier layer as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.