Method of cross-section milling with focused ion beam (FIB) device
US7427753B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 16, 2005 |
| Grant date | Sep 23, 2008 |
| Priority date | — |
| Expiry date | Sep 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31745
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of milling a cross section of a wafer and a milling device. The method includes a coarse scanning of at least two milling frames and a fine scanning of at least one milling frame. The milling device is adapted to cross-section milling of a wafer, said milling includes a coarse scanning of at least two milling frames and a fine scanning of at least one milling frame.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.