Patent · US Active

Method and memory circuit for operating a resistive memory cell

US7428163B2 · kind B2 · utility

6Cited by

2References

14Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Heinz Hoenigschmid · Starnberg, DE
Gerhard Mueller · Meitingen, DE
Milena Dimitrova · Unterhaching, DE
Corvin Liaw · Birkenfeld, DE

Key dates

Filing date	Jul 21, 2006
Grant date	Sep 23, 2008
Priority date	—
Expiry date	Jul 21, 2026

Classification

Technology area (CPC G)Physics
CPC primaryG11C2213/79
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for reading a memory datum from a resistive memory cell comprising a selection transistor which is addressable via a control value, the method comprising detecting a cell current flowing through the resistive memory cell, setting the control value depending on the detected cell current, and providing an information associated to the control value as a memory datum.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.